-
1 bulk metal-insulator-semiconductor structure
Engineering: BMISУниверсальный русско-английский словарь > bulk metal-insulator-semiconductor structure
-
2 структура металл-диэлектрик-полупроводник с объёмным эффектом
Engineering: bulk metal-insulator-semiconductor structureУниверсальный русско-английский словарь > структура металл-диэлектрик-полупроводник с объёмным эффектом
См. также в других словарях:
bulk metal-insulator-semiconductor structure — tūrinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. bulk metal insulator semiconductor structure; bulk MIS structure vok. Volumen Metall Isolator Halbleiter Struktur, f; Volumen MIS Struktur, f rus. объёмная МДП структура, f … Radioelektronikos terminų žodynas
bulk MIS structure — tūrinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. bulk metal insulator semiconductor structure; bulk MIS structure vok. Volumen Metall Isolator Halbleiter Struktur, f; Volumen MIS Struktur, f rus. объёмная МДП структура, f … Radioelektronikos terminų žodynas
structure MIS de volume — tūrinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. bulk metal insulator semiconductor structure; bulk MIS structure vok. Volumen Metall Isolator Halbleiter Struktur, f; Volumen MIS Struktur, f rus. объёмная МДП структура, f … Radioelektronikos terminų žodynas
Semiconductor device — Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most … Wikipedia
Semiconductor — Citations missing|date=March 2008A semiconductor is a solid material that has electrical conductivity in between a conductor and an insulator; it can vary over that wide range either permanently or dynamically. [. They are used in many… … Wikipedia
Volumen-MIS-Struktur — tūrinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. bulk metal insulator semiconductor structure; bulk MIS structure vok. Volumen Metall Isolator Halbleiter Struktur, f; Volumen MIS Struktur, f rus. объёмная МДП структура, f … Radioelektronikos terminų žodynas
Volumen-Metall-Isolator-Halbleiter-Struktur — tūrinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. bulk metal insulator semiconductor structure; bulk MIS structure vok. Volumen Metall Isolator Halbleiter Struktur, f; Volumen MIS Struktur, f rus. объёмная МДП структура, f … Radioelektronikos terminų žodynas
tūrinis MDP darinys — statusas T sritis radioelektronika atitikmenys: angl. bulk metal insulator semiconductor structure; bulk MIS structure vok. Volumen Metall Isolator Halbleiter Struktur, f; Volumen MIS Struktur, f rus. объёмная МДП структура, f pranc. structure… … Radioelektronikos terminų žodynas
объёмная МДП-структура — tūrinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. bulk metal insulator semiconductor structure; bulk MIS structure vok. Volumen Metall Isolator Halbleiter Struktur, f; Volumen MIS Struktur, f rus. объёмная МДП структура, f … Radioelektronikos terminų žodynas
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Field electron emission — It is requested that a diagram or diagrams be included in this article to improve its quality. For more information, refer to discussion on this page and/or the listing at Wikipedia:Requested images. Field emission (FE) (also known as field… … Wikipedia